P01200 - SEMI P12 - 誘導結合プラズマ発光分光法（ICP）によるポジティブ・フォトレジスト中の鉄，亜鉛，カルシウム，マグネシウム，銅，ホウ素，アルミニウム，クロム，マンガン，及びニッケルの測定 Revision:SEMI P12-0997 - Inactive SEMI C36-0705 (technical revision)

SEMI C36-0705 (technical revision)

2  This Test Method can be used for silicon in which the dopant concentrations are less than 0

and wafer manufacturing processes

The adoption of the standards described will greatly reduce the effort required to integrate cluster tool components from independent suppliers

This Test Method clarifies the differences when evaluating films and other components and its materials

P01200 - SEMI P12 - 誘導結合プラズマ発光分光法（ICP）によるポジティブ・フォトレジスト中の鉄，亜鉛，カルシウム，マグネシウム，銅，ホウ素，アルミニウム，クロム，マンガン，及びニッケルの測定 Revision:SEMI P12-0997 - Inactive SEMI C36-0705 (technical revision)NOTICE: This translation is a REFERENCE COPY ONLY. If differences should exist between the English version and a translation in any other language, the English version is the official and authoritative version. SEMI SEMI NOTICE: This Standard or Safety Guideline has an Inactive Status because the conditions to maintain Current Status have not been met. Inactive Standards or Safety Guidelines are available from SEMI and continue to be valid for use.