MF139200 - SEMI MF1392 - Test Method for Determining Net Carrier Density Profiles in Silicon Wafers by Capacitance-Voltage Measurements with a Mercury Probe StdPbc-1214 This Specification covers requirements for

This Specification covers requirements for all grades of dichlorosilane (SiH2Cl2) used in the semiconductor industry

This Test Method identifies and measures cracks in crystalline silicon wafers of a module

This Document defines a test condition for mono-dispersed GNP challenge test

It was available at www

SEMI P5-94 (technical revision)

MF139200 - SEMI MF1392 - Test Method for Determining Net Carrier Density Profiles in Silicon Wafers by Capacitance-Voltage Measurements with a Mercury Probe StdPbc-1214 This Specification covers requirements forThis Test Method covers the measurement of net carrier density and net carrier density profiles in epitaxial and polished bulk silicon wafers in the range from about 4 1013 carriers cm3 to about 8 1016 carriers cm3 (resistivity range from about 0. 1 cm to about 100 cm in n type wafers and from about 0. 24 cm to about 330 cm in p type wafers). This Test Method requires the formation of a Schottky barrier diode with a mercury probe contact to an